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參數(shù)資料
型號： GS832436B-250
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
中文描述： 1M X 36 CACHE SRAM, 6 ns, PBGA119
封裝： 14 X 22 MM, 1.27 MM PITCH, BGA-119
文件頁數(shù)： 20/46頁
文件大小： 1149K
代理商： GS832436B-250
Rev: 1.00 10/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
20/46
2001, Giga Semiconductor, Inc.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.4
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
V
DDQ3
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
1.7
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.8
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
1.7
—
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.8
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
V
DDQ2
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
—
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
–
0.3
—
0.3*V
DD
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
0.6*V
DD
—
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
–
0.3
—
0.3*V
DD
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
相關(guān)PDF資料
PDF描述
GS832436B-250I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832436C-133 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418B-166 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418B-166I 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
GS832418B-200 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8324Z36B-133 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 10NS/4NS 119FBGA - Trays
GS8324Z36B-200I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays
GS8324Z72C200 制造商:G.S.I. 功能描述:
GS8342D06BD-350 制造商:GSI Technology 功能描述:165 FBGA - Bulk
GS8342D06BD-500 制造商:GSI Technology 功能描述:165 FBGA - Bulk
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