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參數資料
| 型號： | GS841Z36AGT-166 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| 中文描述： | 128K X 36 ZBT SRAM, 8.5 ns, PQFP100 |
| 封裝： | ROHS COMPLIANT, TQFP-100 |
| 文件頁數： | 1/30頁 |
| 文件大小： | 495K |
| 代理商： | GS841Z36AGT-166 |
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GS841Z18/36AT-180/166/150/100
4Mb Pipelined and Flow Through
Synchronous NBT SRAMs
180 MHz–100 MHz
3.3 V V
DD
2.5 V and 3.3 V V
DDQ
100-Pin TQFP
Commercial Temp
Industrial Temp
Rev: 1.02 11/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/30
2001, GSI Technology
Features
256K x 18 and 128K x 36 configurations
User-configurable Pipelined and Flow Through mode
NBT (No Bus Turn Around) functionality allows zero wait
Fully pin-compatible with both pipelined and flow through
NtRAM, NoBL and ZBT SRAMs
IEEE 1149.1 JTAG-compatible Boundary Scan
3.3 V +10%/–5% core power supply
2.5 V or 3.3 V I/O supply
LBO pin for Linear or Interleave Burst mode
Byte write operation (9-bit Bytes)
3 chip enable signals for easy depth expansion
Clock Control, registered, address, data, and control
ZZ Pin for automatic power-down
JEDEC-standard 100-lead TQFP package
Pb-Free 100-lead TQFP package available
Functional Description
The GS841Z18/36AT is a 4Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS841Z18/36AT may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge-triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS841Z18/36AT is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
Standard 100-pin TQFP package.
Parameter Synopsis
–180
5.5 ns
3.2 ns
335 mA
8 ns
9.1 ns
210 mA
–166
6.0 ns
3.5 ns
310 mA
8.5 ns
10 ns
190 mA
–150
6.6 ns
3.8 ns
280 mA
10 ns
12 ns
165 mA
–100
10 ns
4.5 ns
190 mA
12 ns
15 ns
135 mA
Pipeline
3-1-1-1
tCycle
t
KQ
I
DD
t
KQ
tCycle
I
DD
Flow
Through
2-1-1-1
相關PDF資料 |
PDF描述 |
|---|---|
| GS841Z36AGT-166I | 4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z36AGT-180 | 4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z36AGT-180I | 4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z36AT-100 | 4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z36AT-100I | 4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS841Z36AGT-166I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z36AGT-180 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z36AGT-180I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z36AT-100 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
| GS841Z36AT-100I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4Mb Pipelined and Flow Through Synchronous NBT SRAMs |
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