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參數資料
型號: GS864032T-167V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述: 2M X 32 CACHE SRAM, 8 ns, PQFP100
封裝: TQFP-100
文件頁數: 9/23頁
文件大?。?/td> 603K
代理商: GS864032T-167V
Synchronous Truth Table
Operation
Address
Used
State
Diagram
Key
5
X
X
X
R
R
W
CR
CR
CW
CW
E
1
E
2
ADSP
ADSC
ADV
W
3
DQ
4
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Notes:
1.
X = Don’t Care, H = High, L = Low
2.
E = T (True) if E
2
= 1 and E
3
= 0; E = F (False) if E
2
= 0 or E
3
= 1
3.
W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
4.
G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
5.
All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
6.
Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See
BOLD
items above.
7.
Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See
ITALIC
items above.
None
None
None
External
External
External
Next
Next
Next
Next
Current
Current
Current
Current
H
L
L
L
L
L
X
H
X
H
X
H
X
H
X
F
F
T
T
T
X
X
X
X
X
X
X
X
X
L
H
L
H
H
H
X
H
X
H
X
H
X
L
X
L
X
L
L
H
H
H
H
H
H
H
H
X
X
X
X
X
X
L
L
L
L
H
H
H
H
X
X
X
X
F
T
F
F
T
T
F
F
T
T
High-Z
High-Z
High-Z
Q
Q
D
Q
Q
D
D
Q
Q
D
D
GS864018/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
9/23
2004, GSI Technology
相關PDF資料
PDF描述
GS864032T-200V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-250IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-250V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864036GT-167IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864036GT-167V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS864032T-200 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-200I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-200IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-200V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864032T-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
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