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參數(shù)資料
| 型號： | GS864032T-250 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| 中文描述： | 2M X 32 CACHE SRAM, 6.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 14/24頁 |
| 文件大小： | 609K |
| 代理商： | GS864032T-250 |
GS864018/32/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
14/24
2004, GSI Technology
20% tKC
V
SS
–
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Note:
These parameters are sample tested.
AC Test Conditions
Parameter
Conditions
V
DD
– 0.2 V
0.2 V
1 V/ns
V
DDQ
/2
V
DDQ
/2
Fig. 1
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
3.
DQ
V
DDQ/2
50
30pF
*
Output Load 1
* Distributed Test Jig Capacitance
= 2.5 V)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS864032T-250I | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864032T-300 | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864032T-300I | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864036GT-167 | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864036GT-167I | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS864032T-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864032T-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864032T-250V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864032T-300 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864032T-300I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
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