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參數(shù)資料
型號(hào): GS864032T-250V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述: 2M X 32 CACHE SRAM, 6.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 16/23頁
文件大小: 603K
代理商: GS864032T-250V
AC Electrical Characteristics
Parameter
Symbol
-250
-200
-167
Unit
Min
4.0
1.5
Max
3.0
Min
5.0
1.5
Max
3.0
Min
6.0
1.5
Max
3.5
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tS
tH
tKC
tKQ
tKQX
1.5
1.5
1.5
ns
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
1.5
0.2
6.5
3.0
6.5
1.5
0.4
7.5
3.0
7.5
1.5
0.5
8.0
3.0
8.0
ns
ns
ns
ns
ns
Flow Through
Clock to Output in Low-Z
tLZ
1
tS
tH
tKH
tKL
3.0
3.0
3.0
ns
Setup time
Hold time
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z
G to Output Valid
1.5
0.5
1.3
1.7
1.5
0.5
1.3
1.7
1.5
0.5
1.3
1.7
ns
ns
ns
ns
tHZ
1
1.5
2.5
1.5
3.0
1.5
3.0
ns
tOE
2.5
3.0
3.5
ns
G to output in Low-Z
tOLZ
1
0
0
0
ns
G to output in High-Z
tOHZ
1
2.5
3.0
3.0
ns
ZZ setup time
tZZS
2
5
5
5
ns
ZZ hold time
tZZH
2
tZZR
1
1
1
ns
ZZ recovery
20
20
20
ns
GS864018/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
16/23
2004, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相關(guān)PDF資料
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GS864036GT-167IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS864036GT-167V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
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GS864036GT-200V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
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