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參數(shù)資料
| 型號： | GS864036GT-200IV |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| 中文描述： | 2M X 36 CACHE SRAM, 7.5 ns, PQFP100 |
| 封裝： | ROHS COMPLIANT, TQFP-100 |
| 文件頁數(shù)： | 15/23頁 |
| 文件大小： | 603K |
| 代理商： | GS864036GT-200IV |
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-250
-200
-167
Unit
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
Operating
Current
Device Selected;
All other inputs
≥
V
IH
o
r
≤
V
IL
Output
open
(x32/
x36)
Pipeline
I
DD
I
DDQ
I
DD
I
DDQ
I
DD
I
DDQ
I
DD
I
DDQ
I
SB
360
50
380
50
310
40
330
40
270
35
290
35
mA
Flow
Through
255
25
275
25
230
20
250
20
220
20
240
20
mA
(x18)
Pipeline
315
25
335
25
270
20
290
20
240
20
260
20
mA
Flow
Through
230
15
250
15
205
15
225
15
195
15
215
15
mA
Standby
Current
ZZ
≥
V
DD
– 0.2 V
—
Pipeline
100
120
100
120
100
120
mA
Flow
Through
I
SB
100
120
100
120
100
120
mA
Deselect
Current
Device Deselected;
All other inputs
≥
V
IH
or
≤
V
IL
—
Pipeline
I
DD
140
155
130
146
125
140
mA
Flow
Through
I
DD
125
140
120
135
120
135
mA
GS864018/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
15/23
2004, GSI Technology
Notes:
1.
2.
I
DD
and I
DDQ
apply to any combination of V
DD
and V
DDQ
operation.
All parameters listed are worst case scenario.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS864036GT-200V | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864036GT-250IV | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864036GT-250V | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864036T-167IV | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864036T-167V | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS864036GT-200V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864036GT-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864036GT-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864036GT-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS864036GT-250V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
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