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參數資料
型號: GS8640E18GT-200IV
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述: 4M X 18 CACHE SRAM, 7.5 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁數: 22/23頁
文件大小: 601K
代理商: GS8640E18GT-200IV
GS8640E18/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
22/23
2004, GSI Technology
4M x 18
2M x 32
2M x 32
2M x 32
2M x 36
2M x 36
2M x 36
Notes:
1.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8640E18T-300IVT.
2.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
4.
PQ = Pre-Qualification.
5.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
GS8640E18GT-167IV
GS8640E32GT-250IV
GS8640E32GT-200IV
GS8640E32GT-167IV
GS8640E36GT-250IV
GS8640E36GT-200IV
GS8640E36GT-167IV
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
167/8
250/6.5
200/7.5
167/8
250/6.5
200/7.5
167/8
I
I
I
I
I
I
I
PQ
PQ
PQ
PQ
PQ
PQ
PQ
Ordering Information for GSI Synchronous Burst RAMs (Continued)
Org
Part Number
1
Type
Voltage
Option
Package
Speed
2
(MHz/ns)
T
A3
Status
4
相關PDF資料
PDF描述
GS8640E18GT-200V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18GT-250IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18GT-250V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18T-167IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18T-167V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS8640E18GT-200V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18GT-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18GT-250V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18T-167IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E18T-167V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
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