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| 型號(hào)： | GS8640E18GT-200V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| 中文描述： | 4M X 18 CACHE SRAM, 7.5 ns, PQFP100 |
| 封裝： | ROHS COMPLIANT, TQFP-100 |
| 文件頁(yè)數(shù)： | 9/23頁(yè) |
| 文件大小： | 601K |
| 代理商： | GS8640E18GT-200V |
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Synchronous Truth Table
Operation
Address
Used
State
Diagram
Key
5
E
1
E
2
ADSP
ADSC
ADV
W
3
DQ
4
Deselect Cycle, Power Down
None
X
H
X
X
L
X
X
High-Z
Deselect Cycle, Power Down
None
X
L
F
L
X
X
X
High-Z
Deselect Cycle, Power Down
None
X
L
F
H
L
X
X
High-Z
Read Cycle, Begin Burst
External
R
L
T
L
X
X
X
Q
Read Cycle, Begin Burst
External
R
L
T
H
L
X
F
Q
Write Cycle, Begin Burst
External
W
L
T
H
L
X
T
D
Read Cycle, Continue Burst
Next
CR
X
X
H
H
L
F
Q
Read Cycle, Continue Burst
Next
CR
H
X
X
H
L
F
Q
Write Cycle, Continue Burst
Next
CW
X
X
H
H
L
T
D
Write Cycle, Continue Burst
Next
CW
H
X
X
H
L
T
D
Read Cycle, Suspend Burst
Current
X
X
H
H
H
F
Q
Read Cycle, Suspend Burst
Current
H
X
X
H
H
F
Q
Write Cycle, Suspend Burst
Current
X
X
H
H
H
T
D
Write Cycle, Suspend Burst
Current
H
X
X
H
H
T
D
Notes:
1.
2.
3.
4.
X = Don’t Care, H = High, L = Low
E = T (True) if E
2
= 1 and E
3
= 0; E = F (False) if E
2
= 0 or E
3
= 1
W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.
G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as “Q” in the Truth Table above).
All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See
BOLD
items above.
Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See
ITALIC
items above.
5.
6.
7.
GS8640E18/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
9/23
2004, GSI Technology
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8640E18GT-250IV | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18GT-250V | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-167IV | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-167V | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-200IV | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8640E18GT-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18GT-250V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-167IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-167V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-200IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
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