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參數(shù)資料
| 型號： | GS8640E18T-167V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| 中文描述： | 4M X 18 CACHE SRAM, 8 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 22/23頁 |
| 文件大?。?/td> | 601K |
| 代理商： | GS8640E18T-167V |
GS8640E18/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
22/23
2004, GSI Technology
4M x 18
2M x 32
2M x 32
2M x 32
2M x 36
2M x 36
2M x 36
Notes:
1.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8640E18T-300IVT.
2.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
4.
PQ = Pre-Qualification.
5.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
GS8640E18GT-167IV
GS8640E32GT-250IV
GS8640E32GT-200IV
GS8640E32GT-167IV
GS8640E36GT-250IV
GS8640E36GT-200IV
GS8640E36GT-167IV
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
DCD Synchronous Burst
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
167/8
250/6.5
200/7.5
167/8
250/6.5
200/7.5
167/8
I
I
I
I
I
I
I
PQ
PQ
PQ
PQ
PQ
PQ
PQ
Ordering Information for GSI Synchronous Burst RAMs (Continued)
Org
Part Number
1
Type
Voltage
Option
Package
Speed
2
(MHz/ns)
T
A3
Status
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8640E18T-200IV | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-200V | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-250IV | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-250V | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-V | 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8640E18T-200IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-200V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-250V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
| GS8640E18T-V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs |
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