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參數(shù)資料
型號(hào): GS8640E36GT-200V
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
中文描述: 2M X 36 CACHE SRAM, 7.5 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁(yè)數(shù): 11/23頁(yè)
文件大小: 601K
代理商: GS8640E36GT-200V
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
GS8640E18/32/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
11/23
2004, GSI Technology
Simplified State Diagram with G
相關(guān)PDF資料
PDF描述
GS8640E36GT-250IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E36GT-250V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E36T-167IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E36T-167V 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E36T-200IV 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8640E36GT-250IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E36GT-250V 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E36T-167IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E36T-167V 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E36T-200IV 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
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