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參數(shù)資料

First Write

First Read

Burst Write

Burst Read

Deselect

Notes:

The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.

The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B

, B

, BW, and GW) control inputs, and

that ADSP is tied high and ADSC is tied low.

The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and

assumes ADSP is tied high and ADV is tied low.

GS8640E18/32/36T-xxxV

Preliminary

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.01 6/2006

10/23

2004, GSI Technology

Simplified State Diagram

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
GS8640E36T-167V	制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E36T-200IV	制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E36T-200V	制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E36T-250IV	制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
GS8640E36T-250V	制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs

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