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參數(shù)資料
| 型號： | GS8640Z18T-200I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 4M X 18 ZBT SRAM, 7.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 17/25頁 |
| 文件大?。?/td> | 618K |
| 代理商： | GS8640Z18T-200I |
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
Test Conditions
Min
Max
I
IL
V
IN
= 0 to V
DD
–
2 uA
2 uA
ZZInput Current
I
IN1
V
DD
≥
V
IN
≥
V
IH
0 V
≤
V
IN
≤
V
IH
Output Disable, V
OUT
= 0 to V
DD
Output Disable, V
OUT
= 0 to V
DD
I
OH
=
–
8 mA, V
DDQ
= 2.375 V
I
OH
=
–
8 mA, V
DDQ
= 3.135 V
I
OL
= 8 mA
–
1 uA
–
1 uA
1 uA
100 uA
Output Leakage Current (x36/x72)
I
OL
I
OL
V
OH2
V
OH3
V
OL
–
1 uA
1 uA
Output Leakage Current (x18)
–
1 uA
1 uA
Output High Voltage
1.7 V
—
Output High Voltage
2.4 V
—
Output Low Voltage
—
0.4 V
GS8640Z18/36T-300/250/200/167
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 1/2006
17/25
2004, GSI Technology
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| GS8640Z18T-250 | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18T-250I | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18T-300 | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS8640Z18T-200IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18T-200V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18T-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18T-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18T-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
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