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參數資料
| 型號： | GS8640Z18T-200IV |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 4M X 18 ZBT SRAM, 7.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數： | 15/22頁 |
| 文件大小： | 600K |
| 代理商： | GS8640Z18T-200IV |
AC Test Conditions
Parameter
Conditions
V
DD
– 0.2 V
0.2 V
1 V/ns
V
DD
/2
V
DDQ
/2
Fig. 1
DQ
V
DDQ/2
50
30pF
*
Output Load 1
* Distributed Test Jig Capacitance
Figure 1
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
3.
GS8640Z18/36T-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 6/2006
15/22
2004, GSI Technology
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
Test Conditions
Min
Max
I
IL
V
IN
= 0 to V
DD
–
1 uA
1 uA
FT, ZZ Input Current
I
IN
I
OL
V
DD
≥
V
IN
≥
0 V
Output Disable, V
OUT
= 0 to V
DD
–
100 uA
100 uA
Output Leakage Current
–
1 uA
1 uA
DC Output Characteristics (1.8 V/2.5 V Version)
Parameter
Symbol
V
OH1
V
OH2
V
OL1
V
OL2
Test Conditions
I
OH
=
–
4 mA, V
DDQ
= 1.6 V
I
OH
=
–
8 mA, V
DDQ
= 2.375 V
I
OL
= 4 mA
I
OL
= 8 mA
Min
Max
1.8 V Output High Voltage
V
DDQ
– 0.4 V
—
2.5 V Output High Voltage
1.7 V
—
1.8 V Output Low Voltage
—
0.4 V
2.5 V Output Low Voltage
—
0.4 V
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相關代理商/技術參數 |
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| GS8640Z18T-200V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18T-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
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| GS8640Z18T-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8640Z18T-250V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
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