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參數資料
型號: GS8640ZV36T-250
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 72Mb Pipelined and Flow Through Synchronous NBT SRAM
中文描述: 2M X 36 ZBT SRAM, 6.5 ns, PQFP100
封裝: TQFP-100
文件頁數: 1/23頁
文件大小: 450K
代理商: GS8640ZV36T-250
Product Preview
GS8640ZV18/36T-300/250/200/167
72Mb Pipelined and Flow Through
Synchronous NBT SRAM
300 MHz
167 MHz
1.8 V V
DD
1.8 V I/O
100-Pin TQFP
Commercial Temp
Industrial Temp
Rev: 1.00 9/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/23
2004, GSI Technology
Features
NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM, NoBL and
ZBT SRAMs
1.8 V +10%/
10% core power supply
1.8 V I/O supply
User-configurable Pipeline and Flow Through mode
LBO pin for Linear or Interleave Burst mode
Pin compatible with 4Mb, 9Mb, 18Mb and 36Mb devices
Byte write operation (9-bit Bytes)
3 chip enable signals for easy depth expansion
ZZ Pin for automatic power-down
JEDEC-standard 100-lead TQFP package
Pb-Free 100-lead TQFP package available
Functional Description
The GS8640ZV18/36T is a 72Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8640ZV18/36T may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, meaning that in addition to the
rising edge triggered registers that capture input signals, the
device incorporates a rising-edge-triggered output register. For
read cycles, pipelined SRAM output data is temporarily stored
by the edge triggered output register during the access cycle
and then released to the output drivers at the next rising edge of
clock.
The GS8640ZV18/36T is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 100-pin TQFP package.
Parameter Synopsis
-300
2.3
3.3
400
480
5.5
5.5
285
330
-250
2.5
4.0
340
410
6.5
6.5
245
280
-200
3.0
5.0
290
350
7.5
7.5
220
250
-167
3.5
6.0
260
305
8.0
8.0
210
240
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
Flow
Through
2-1-1-1
相關PDF資料
PDF描述
GS8640ZV36T-250I 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640ZV36T-300 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640ZV36T-300I 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS864218B-167IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864236GB-167V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS8640ZV36T-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640ZV36T-300 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640ZV36T-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS864118GF-167I 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 167MHZ, 8NS - Trays
GS864118GF-250 制造商:GSI Technology 功能描述:4MBX18, PIPELINE/FLOW THROUGH, 165 BGA, 250MHZ, 6.5NS - Trays
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