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參數資料
| 型號： | GS864236B-200V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 2M X 36 CACHE SRAM, 7.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 |
| 文件頁數： | 13/35頁 |
| 文件大小： | 934K |
| 代理商： | GS864236B-200V |
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First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
Preliminary
GS864218/36/72(B/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2006
13/35
2004, GSI Technology
Simplified State Diagram with G
相關PDF資料 |
PDF描述 |
|---|---|
| GS864236B-250IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236B-250V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-167IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS8642Z18GB-167I | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8642Z18B | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS864236B-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236B-250M | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 2MX36 6.5NS/2.5NS 119FBGA - Trays |
| GS864236B-250V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-167IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864236GB-167V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
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