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參數資料
型號: GS864236GB-250IV
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
中文描述: 2M X 36 CACHE SRAM, 6.5 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119
文件頁數: 13/35頁
文件大小: 934K
代理商: GS864236GB-250IV
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
Preliminary
GS864218/36/72(B/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2006
13/35
2004, GSI Technology
Simplified State Diagram with G
相關PDF資料
PDF描述
GS864236GB-250V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864272C-167IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864272C-167V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864272C-200IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864272C-200V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS864236GB-250M 制造商:GSI Technology 功能描述:GS864236GB-250M - Trays
GS864236GB-250V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 72MBIT 2MX36 6.5NS/3NS 119FBGA - Trays
GS864236GB-300I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 72MBIT 2MX36 5.5NS/2.3NS 119FBGA - Trays
GS864272C-167 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 72MBIT 1MX72 8NS/3.5NS 209FBGA - Trays
GS864272C-167I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 72MBIT 1MX72 8NS/3.5NS 209FBGA - Trays
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