- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385328 > GS864272C-167IV (GSI TECHNOLOGY) 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs PDF資料下載
參數(shù)資料
| 型號(hào)： | GS864272C-167IV |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 1M X 72 CACHE SRAM, 8 ns, PBGA209 |
| 封裝： | 14 X 22 MM, 1 MM PITCH, BGA-209 |
| 文件頁數(shù)： | 14/35頁 |
| 文件大小： | 934K |
| 代理商： | GS864272C-167IV |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁當(dāng)前第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage on V
DDQ
Pins
Value
Unit
–
0.5 to 4.6
V
–
0.5 to V
DD
V
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
4.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
–
20
mA
Output Current on Any I/O Pin
+/
–
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Preliminary
GS864218/36/72(B/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2006
14/35
2004, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD1
1.7
1.8
2.0
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ1
1.7
1.8
V
DD
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
V
DD
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS864272C-167V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864272C-200IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864272C-200V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864272C-250IV | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864272C-250V | 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS864272C-167V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 72MBIT 1MX72 8NS/3.4NS 209BGA - Bulk |
| GS864272C-200 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 72MBIT 1MX72 7.5NS/3NS 209FBGA - Trays |
| GS864272C-200IV | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 72MBIT 1MX72 7.5NS/3NS 209BGA - Bulk |
| GS864272C-200V | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 72MBIT 1MX72 7.5NS/3NS 209BGA - Bulk |
| GS864272C-250 | 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 72MBIT 1MX72 6.5NS/3NS 209FBGA - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。