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參數(shù)資料
型號(hào)： GS864272GC-250IV
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
中文描述： 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
封裝： 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209
文件頁(yè)數(shù)： 33/35頁(yè)
文件大小： 934K
代理商： GS864272GC-250IV
Preliminary
GS864218/36/72(B/C)-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2006
33/35
2004, GSI Technology
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number
1
Type
Voltage
Option
Package
Speed
2
(MHz/ns)
T
A3
Status
4
4M x 18
GS864218B-250V
SCD/DCD
1.8 V or 2.5 V
119 BGA (var.2)
250/6.5
C
PQ
4M x 18
GS864218B-200V
SCD/DCD
1.8 V or 2.5 V
119 BGA (var.2)
200/7.5
C
PQ
4M x 18
GS864218B-167V
SCD/DCD
1.8 V or 2.5 V
119 BGA (var.2)
167/8
C
PQ
2M x 36
GS864236B-250V
SCD/DCD
1.8 V or 2.5 V
119 BGA (var.2)
250/6.5
C
PQ
2M x 36
GS864236B-200V
SCD/DCD
1.8 V or 2.5 V
119 BGA (var.2)
200/7.5
C
PQ
2M x 36
GS864236B-167V
SCD/DCD
1.8 V or 2.5 V
119 BGA (var.2)
167/8
C
PQ
1M x 72
GS864272C-250V
SCD/DCD
1.8 V or 2.5 V
209 BGA
250/6.5
C
PQ
1M x 72
GS864272C-200V
SCD/DCD
1.8 V or 2.5 V
209 BGA
200/7.5
C
PQ
1M x 72
GS864272C-167V
SCD/DCD
1.8 V or 2.5 V
209 BGA
167/8
C
PQ
4M x 18
GS864218B-250IV
SCD/DCD
1.8 V or 2.5 V
119 BGA (var.2)
250/6.5
I
PQ
4M x 18
GS864218B-200IV
SCD/DCD
1.8 V or 2.5 V
119 BGA (var.2)
200/7.5
I
PQ
4M x 18
GS864218B-167IV
SCD/DCD
1.8 V or 2.5 V
119 BGA (var.2)
167/8
I
PQ
2M x 36
GS864236B-250IV
SCD/DCD
1.8 V or 2.5 V
119 BGA (var.2)
250/6.5
I
PQ
2M x 36
GS864236B-200IV
SCD/DCD
1.8 V or 2.5 V
119 BGA (var.2)
200/7.5
I
PQ
2M x 36
GS864236B-167IV
SCD/DCD
1.8 V or 2.5 V
119 BGA (var.2)
167/8
I
PQ
1M x 72
GS864272C-250IV
SCD/DCD
1.8 V or 2.5 V
209 BGA
250/6.5
I
PQ
1M x 72
GS864272C-200IV
SCD/DCD
1.8 V or 2.5 V
209 BGA
200/7.5
I
PQ
1M x 72
GS864272C-167IV
SCD/DCD
1.8 V or 2.5 V
209 BGA
167/8
I
PQ
4M x 18
GS864218GB-250V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
250/6.5
C
PQ
4M x 18
GS864218GB-200V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
200/7.5
C
PQ
4M x 18
GS864218GB-167V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
167/8
C
PQ
2M x 36
GS864236GB-250V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
250/6.5
C
PQ
2M x 36
GS864236GB-200V
SCD/DCD
1.8 V or 2.5 V
RoHS-compliant 119 BGA (var.2)
200/7.5
C
PQ
Notes:
1.
2.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864218B-167IVB.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
PQ = Pre-Qualification.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
3.
4.
5.
相關(guān)PDF資料
PDF描述
GS864272GC-250V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218B-167V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218B-200IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218B-200V 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864218B-250IV 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS864272GC-250V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 72MBIT 1MX72 6.5NS/3NS 209BGA - Bulk
GS864272GC-300 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 72MBIT 1MX72 5.5NS/3NS 209FBGA - Trays
GS864272GC-300I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 72MBIT 1MX72 5.5NS/3NS 209FBGA - Trays
GS864272GC-300IV 制造商:GSI Technology 功能描述:72MB S/DCD SYNCH BURST SRAM - Bulk
GS864272GC-300V 制造商:GSI Technology 功能描述:72MB S/DCD SYNCH BURST SRAM - Bulk
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