- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385330 > GS8642ZV36GB-200 (GSI TECHNOLOGY) 72Mb Pipelined and Flow Through Synchronous NBT SRAM PDF資料下載
參數(shù)資料
| 型號： | GS8642ZV36GB-200 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 2M X 36 ZBT SRAM, 7.5 ns, PBGA119 |
| 封裝： | 22 X 14 MM, 1.27 MM PITCH, LEAD FREE, BGA-119 |
| 文件頁數(shù)： | 15/32頁 |
| 文件大小： | 805K |
| 代理商： | GS8642ZV36GB-200 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
Description
Value
Unit
V
DD
Voltage on V
DD
Pins
–
0.5 to 3.6
V
V
DDQ
Voltage in V
DDQ
Pins
–
0.5 to 3.6
V
V
I/O
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
3.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
3.6 V max.)
V
V
IN
Voltage on Other Input Pins
V
I
IN
Input Current on Any Pin
+/
–
20
mA
I
OUT
Output Current on Any I/O Pin
+/
–
20
mA
P
D
Package Power Dissipation
1.5
W
T
STG
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Product Preview
GS8642ZV18(B)/GS8642ZV36(B)/GS8642ZV72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 5/2005
15/32
2004, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD
1.6
1.8
2.0
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ
1.6
1.8
2.0
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
–
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8642ZV36GB-200I | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8642ZV36GB-250 | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8642ZV36GB-250I | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8642ZV36GB-300 | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8642ZV36GB-300I | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8642ZV36GB-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8642ZV36GB-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8642ZV36GB-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8642ZV36GB-300 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8642ZV36GB-300I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。