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參數資料
型號： GS864418E-200
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
中文描述： 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
封裝： 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁數： 29/32頁
文件大小： 811K
代理商： GS864418E-200
Preliminary
GS864418/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 6/2006
29/32
2003, GSI Technology
Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number
1
Type
Voltage
Option
Package
Speed
2
(MHz/ns)
T
A3
Status
4
4M x 18
GS864418E-250
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
250/6.5
C
PQ
4M x 18
GS864418E-225
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
225/6.5
C
PQ
4M x 18
GS864418E-200
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
200/6.5
C
PQ
4M x 18
GS864418E-166
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
166/8
C
PQ
4M x 18
GS864418E-150
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
150/8.5
C
PQ
4M x 18
GS864418E-133
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
133/8.5
C
PQ
2M x 36
GS864436E-250
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
250/6.5
C
PQ
2M x 36
GS864436E-225
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
225/6.5
C
PQ
2M x 36
GS864436E-200
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
200/6.5
C
PQ
2M x 36
GS864436E-166
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
166/8
C
PQ
2M x 36
GS864436E-150
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
150/8.5
C
PQ
2M x 36
GS864436E-133
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
133/8.5
C
PQ
4M x 18
GS864418E-250I
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
250/6.5
I
PQ
4M x 18
GS864418E-225I
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
225/6.5
I
PQ
4M x 18
GS864418E-200I
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
200/6.5
I
PQ
4M x 18
GS864418E-166I
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
166/8
I
PQ
4M x 18
GS864418E-150I
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
150/8.5
I
PQ
4M x 18
GS864418E-133I
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
133/8.5
I
PQ
2M x 36
GS864436E-250I
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
250/6.5
I
PQ
2M x 36
GS864436E-225I
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
225/6.5
I
PQ
2M x 36
GS864436E-200I
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
200/6.5
I
PQ
2M x 36
GS864436E-166I
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
166/8
I
PQ
2M x 36
GS864436E-150I
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
150/8.5
I
PQ
2M x 36
GS864436E-133I
Synchronous Burst MCM
1.8 V or 2.5 V
165 BGA
133/8.5
I
PQ
Notes:
1.
2.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS864418B-150IB.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
PQ = Pre-Qualification.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
3.
4.
5.
相關PDF資料
PDF描述
GS864418E-200I 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-200IV 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-200V 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-225 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-225I 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS864418E-200I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-200IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-200V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-225 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-225I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
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