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參數資料
型號: GS864418E-200V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
中文描述: 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁數: 15/32頁
文件大小: 811K
代理商: GS864418E-200V
AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
4.0
1.0
1.0
1.3
0.2
6.5
3.0
3.0
1.5
0.5
1.3
1.5
Max
2.3
6.5
Min
4.4
1.0
1.0
1.3
0.3
6.5
3.0
3.0
1.5
0.5
1.3
1.5
Max
2.5
6.5
Min
5.0
1.0
1.0
1.4
0.4
6.5
3.0
3.0
1.5
0.5
1.3
1.5
Max
2.7
6.5
Min
6.0
1.0
1.0
1.5
0.5
7.0
3.0
3.0
1.5
0.5
1.3
1.5
Max
2.9
7.0
Min
6.7
1.0
1.0
1.5
0.5
7.5
3.0
3.0
1.5
0.5
1.5
1.7
Max
3.3
7.5
Min
7.5
1.0
1.0
1.5
0.5
8.5
3.0
3.0
1.5
0.5
1.7
2
Max
3.5
8.5
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
Clock to Output in Low-Z
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
Clock to Output in Low-Z
Setup time
Hold time
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z
G to Output Valid
G to output in Low-Z
tKC
tKQ
tKQX
tLZ
1
tS
tH
tKC
tKQ
tKQX
tLZ
1
tS
tH
tKH
tKL
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Flow
Through
tHZ
1
1.0
2.3
1.0
2.5
1.0
2.7
1.0
2.9
1.0
3.0
1.0
3.0
ns
tOE
tOLZ
1
tOHZ
1
tZZS
2
tZZH
2
tZZR
0
2.3
0
2.5
0
2.7
0
2.9
0
3.3
0
3.5
ns
ns
G to output in High-Z
2.3
2.5
2.7
2.9
3.0
3.0
ns
ZZ setup time
5
5
5
5
5
5
ns
ZZ hold time
ZZ recovery
1
1
1
1
1
1
ns
ns
20
20
20
20
20
20
Preliminary
GS864418/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 6/2006
15/32
2003, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相關PDF資料
PDF描述
GS864418E-225 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-225I 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-225IV 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-225V 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-250 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS864418E-225 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-225I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-225IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-225V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
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