- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385332 > GS864418E-225 (GSI TECHNOLOGY) 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs PDF資料下載
參數(shù)資料
| 型號(hào)： | GS864418E-225 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| 中文描述： | 4M X 18 CACHE SRAM, 6.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數(shù)： | 25/32頁 |
| 文件大小： | 811K |
| 代理商： | GS864418E-225 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁當(dāng)前第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁
JTAG TAP Instruction Set Summary
Instruction
Code
Description
Notes
EXTEST
000
Places the Boundary Scan Register between TDI and TDO.
1
IDCODE
001
Preloads ID Register and places it between TDI and TDO.
1, 2
SAMPLE-Z
010
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
Forces all RAM output drivers to High-Z.
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
RFU
011
1
SAMPLE/
PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
1
GSI
101
GSI private instruction.
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
RFU
110
1
BYPASS
111
Places Bypass Register between TDI and TDO.
1
Notes:
1.
2.
Instruction codes expressed in binary, MSB on left, LSB on right.
Default instruction automatically loaded at power-up and in test-logic-reset state.
Preliminary
GS864418/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 6/2006
25/32
2003, GSI Technology
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS864418E-225I | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-225IV | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-225V | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-250 | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-250I | 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS864418E-225I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-225IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-225V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs |
| GS864418E-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。