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參數資料
型號: GS864418E-225IV
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
中文描述: 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁數: 13/32頁
文件大?。?/td> 811K
代理商: GS864418E-225IV
AC Test Conditions
Parameter
Conditions
V
DD
– 0.2 V
0.2 V
1 V/ns
V
DD
/2
V
DDQ
/2
Fig. 1
DQ
V
DDQ/2
50
30pF
*
Output Load 1
* Distributed Test Jig Capacitance
Figure 1
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
3.
Preliminary
GS864418/36E-xxxV
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 6/2006
13/32
2003, GSI Technology
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
Test Conditions
Min
Max
I
IL
V
IN
= 0 to V
DD
1 uA
1 uA
FT, SCD, ZQ, ZZ Input Current
I
IN
I
OL
V
DD
V
IN
0 V
Output Disable, V
OUT
= 0 to V
DD
100 uA
100 uA
Output Leakage Current
1 uA
1 uA
DC Output Characteristics (1.8 V/2.5 V Version)
Parameter
Symbol
V
OH1
V
OH2
V
OL1
V
OL2
Test Conditions
I
OH
=
4 mA, V
DDQ
= 1.6 V
I
OH
=
8 mA, V
DDQ
= 2.375 V
I
OL
= 4 mA
I
OL
= 8 mA
Min
Max
1.8 V Output High Voltage
V
DDQ
– 0.4 V
2.5 V Output High Voltage
1.7 V
1.8 V Output Low Voltage
0.4 V
2.5 V Output Low Voltage
0.4 V
相關PDF資料
PDF描述
GS864418E-225V 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-250 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-250I 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS8644ZV36B-133 72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8644ZV72C-166I 72Mb Pipelined and Flow Through Synchronous NBT SRAM
相關代理商/技術參數
參數描述
GS864418E-225V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
GS864418E-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
GS864418E-V 制造商:GSI 制造商全稱:GSI Technology 功能描述:4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
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