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參數資料
| 型號： | GS8644ZV18E-250I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 4M X 18 ZBT SRAM, 6.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FBGA-165 |
| 文件頁數： | 18/37頁 |
| 文件大小： | 776K |
| 代理商： | GS8644ZV18E-250I |
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GS8644ZV18(B/E)/GS8644ZV36(B/E)/GS8644ZV72(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
18/37
2003, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
Description
Value
Unit
V
DD
Voltage on V
DD
Pins
–
0.5 to 3.6
V
V
DDQ
Voltage in V
DDQ
Pins
–
0.5 to 3.6
V
V
I/O
Voltage on I/O Pins
–
0.5 to V
DDQ
+0.5 (
≤
3.6 V max.)
–
0.5 to V
DD
+0.5 (
≤
3.6 V max.)
V
V
IN
Voltage on Other Input Pins
V
I
IN
Input Current on Any Pin
+/
–
20
mA
I
OUT
Output Current on Any I/O Pin
+/
–
20
mA
P
D
Package Power Dissipation
1.5
W
T
STG
Storage Temperature
–
55 to 125
o
C
T
BIAS
Temperature Under Bias
–
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
1.8 V Supply Voltage
V
DD1
1.6
1.8
2.0
V
1.8 V V
DDQ
I/O Supply Voltage
V
DDQ1
1.6
1.8
2.0
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
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| GS8644ZV36B-166 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Pipelined and Flow Through Synchronous NBT SRAM |
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