- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385333 > GS8662D08GE-333I (GSI TECHNOLOGY) 72Mb SigmaQuad-II Burst of 4 SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | GS8662D08GE-333I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 72Mb SigmaQuad-II Burst of 4 SRAM |
| 中文描述： | 8M X 8 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件頁(yè)數(shù)： | 23/29頁(yè) |
| 文件大小： | 896K |
| 代理商： | GS8662D08GE-333I |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)當(dāng)前第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)
Preliminary
GS8662D08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 2/2006
23/29
2005, GSI Technology
Hold Times
Address Input Hold Time
t
KHAX
0.4
—
0.4
—
0.5
—
0.6
—
0.7
—
ns
Control Input Hold Time
t
KHIX
0.4
—
0.4
—
0.5
—
0.6
—
0.7
—
ns
Data Input Hold Time
Notes:
1.
All Address inputs must meet the specified setup and hold times for all latching clock edges.
2.
Control singles are R, W, BW0, BW1, and (NW0, NW1 for x8) and (BW2, BW3 for x36).
3.
If C, C are tied high, K, K become the references for C, C timing parameters
4.
To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ. The specs as shown do not imply bus contention because tCHQX1 is a MIN param-
eter that is worst case at totally different test conditions (0
°
C, 1.9 V) than tCHQZ, which is a MAX parameter (worst case at 70
°
C, 1.7 V). It is not possible for two SRAMs on the
same board to be at such different voltages and temperatures.
5.
Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
6.
V
DD
slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention. DLL lock time begins once V
DD
and input clock are stable.
7.
Echo clock is very tightly controlled to data valid/data hold. By design, there is a ±0.1 ns variation from echo clock to data. The datasheet parameters reflect tester guard bands
and test setup variations.
t
KHDX
0.28
—
0.3
—
0.35
—
0.4
—
0.5
—
ns
AC Electrical Characteristics (Continued)
Parameter
Symbol
-333
-300
-250
-200
-167
Units
Notes
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8662D09E-167 | 72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-167I | 72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-200 | 72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-200I | 72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-250 | 72Mb SigmaQuad-II Burst of 4 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8662D09BD-300 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
| GS8662D09E-167 | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-167I | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-200 | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-200I | 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。