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參數資料
| 型號： | GS8662D09E-200I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb SigmaQuad-II Burst of 4 SRAM |
| 中文描述： | 8M X 9 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數： | 17/29頁 |
| 文件大小： | 896K |
| 代理商： | GS8662D09E-200I |
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Preliminary
GS8662D08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 2/2006
17/29
2005, GSI Technology
State Diagram
Power-Up
Read NOP
Load New
Read Address
D Count = 0
DDR Read
D Count = D Count + 1
Write NOP
Load New
Write Address
D Count = 0
DDR Write
D Count = D Count + 1
WRITE
READ
READ
D Count = 2
WRITE
D Count = 2
READ
WRITE
Always
Always
READ
D Count = 2
Notes:
1.
2.
Internal burst counter is fixed as 2-bit linear (i.e., when first address is A0+0, next internal burst address is A0+1.
“READ” refers to read active status with R = Low, “READ” refers to read inactive status with R = High. The same is
true for “WRITE” and “WRITE”.
Read and write state machine can be active simultaneously.
State machine control timing sequence is controlled by K.
3.
4.
READ
D Count = 1
Always
Increment
Read Address
WRITE
D Count = 2
Increment
Write Address
WRITE
D Count = 1
Always
相關PDF資料 |
PDF描述 |
|---|---|
| GS8662D09E-250 | 72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-250I | 72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-300 | 72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-300I | 72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-333 | 72Mb SigmaQuad-II Burst of 4 SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8662D09E-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-300 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-300I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM |
| GS8662D09E-333 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM |
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