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參數資料
型號: GS8662D18E-300
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 72Mb SigmaQuad-II Burst of 4 SRAM
中文描述: 4M X 18 DDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁數: 7/29頁
文件大小: 896K
代理商: GS8662D18E-300
Preliminary
GS8662D08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 2/2006
7/29
2005, GSI Technology
Background
Separate I/O SRAMs, from a system architecture point of view, are attractive in applications where alternating reads and writes are
needed. Therefore, the SigmaQuad-II SRAM interface and truth table are optimized for alternating reads and writes. Separate I/O
SRAMs are unpopular in applications where multiple reads or multiple writes are needed because burst read or write transfers from
Separate I/O SRAMs can cut the RAM’s bandwidth in half.
Alternating Read-Write Operations
SigmaQuad-II SRAMs follow a few simple rules of operation.
- Read or Write commands issued on one port are never allowed to interrupt an operation in progress on the other port.
- Read or Write data transfers in progress may not be interrupted and re-started.
- R and W high always deselects the RAM.
- All address, data, and control inputs are sampled on clock edges.
In order to enforce these rules, each RAM combines present state information with command inputs. See the Truth Table for
details.
SigmaQuad-II B4 SRAM DDR Read
The status of the Address Input, W, and R pins are sampled by the rising edges of K. W and R high causes chip disable. A low on
the Read Enable-bar pin, R, begins a read cycle. R is always ignored if the previous command loaded was a read command. Data
can be clocked out after the next rising edge of K with a rising edge of C (or by K if C and C are tied high), after the following
rising edge of K with a rising edge of C (or by K if C and C are tied high), after the next rising edge of K with a rising edge of C,
and after the following rising edge of K with a rising edge of C. Clocking in a high on the Read Enable-bar pin, R, begins a read
port deselect cycle.
SigmaQuad-II B4 Double Data Rate SRAM Read First
Read A
NOP
Read B
Write C
Read D
Write E
NOP
A
B
C
D
E
C
C+1
C+2
C+3
E
E+1
C
C+1
C+2
C+3
E
E+1
A
A+1
A+2
A+3
B
B+1
B+2
B+3
D
D+1
D+2
K
K
Address
R
W
BWx
D
C
C
Q
CQ
CQ
相關PDF資料
PDF描述
GS8662D18E-300I 72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D18E-333 72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D18E-333I 72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D18GE-167 72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D18GE-167I 72Mb SigmaQuad-II Burst of 4 SRAM
相關代理商/技術參數
參數描述
GS8662D18E-300I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 0.45NS 165FBGA - Trays
GS8662D18E-333 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D18E-333I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D18GE-167 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 0.5NS 165FBGA - Trays
GS8662D18GE-167I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 0.5NS 165FBGA - Trays
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