欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: GS8662D36GE-167
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 72Mb SigmaQuad-II Burst of 4 SRAM
中文描述: 2M X 36 DDR SRAM, 0.5 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數: 13/29頁
文件大小: 896K
代理商: GS8662D36GE-167
Preliminary
GS8662D08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 2/2006
13/29
2005, GSI Technology
FLXDrive-II Output Driver Impedance Control
HSTL I/O SigmaQuad-II SRAMs are supplied with programmable impedance output drivers. The ZQ pin must be connected to
V
SS
via an external resistor, RQ, to allow the SRAM to monitor and adjust its output driver impedance. The value of RQ must be
5X the value of the desired RAM output impedance. The allowable range of RQ to guarantee impedance matching continuously is
between 150
and 300
. Periodic readjustment of the output driver impedance is necessary as the impedance is affected by drifts
in supply voltage and temperature. The SRAM’s output impedance circuitry compensates for drifts in supply voltage and
temperature. A clock cycle counter periodically triggers an impedance evaluation, resets and counts again. Each impedance
evaluation may move the output driver impedance level one step at a time towards the optimum level. The output driver is
implemented with discrete binary weighted impedance steps. Updates of pull-down drive impedance occur whenever a driver is
producing a “1” or is High-Z. Pull-up drive impedance is updated when a driver is producing a “0” or is High-Z.
Separate I/O SigmaQuad-II B4 SRAM Truth Table
Previous
Operation
A
R
W
Current
Operation
D
D
D
D
Q
Q
Q
Q
K
(t
n-1
)
K
(t
n
)
K
(t
n
)
K
(t
n
)
K
(t
n
)
K
(t
n+1
)
K
(t
n+1
)
K
(t
n+2
)
K
(t
n+2
)
K
(t
n+1
)
K
(t
n+1
)
K
(t
n+2
)
K
(t
n+2
)
Deselect
X
1
1
Deselect
X
X
Hi-Z
Hi-Z
Write
X
1
X
Deselect
D2
D3
Hi-Z
Hi-Z
Read
X
X
1
Deselect
X
X
Q2
Q3
Deselect
V
1
0
Write
D0
D1
D2
D3
Hi-Z
Hi-Z
Deselect
V
0
X
Read
X
X
Q0
Q1
Q2
Q3
Read
V
X
0
Write
D0
D1
D2
D3
Q2
Q3
Write
V
0
X
Read
D2
D3
Q0
Q1
Q2
Q3
Notes:
1.
2.
3.
4.
5.
“1” = input “high”; “0” = input “low”; “V” = input “valid”; “X” = input “don’t care”
“—” indicates that the input requirement or output state is determined by the next operation.
Q0, Q1, Q2, and Q3 indicate the first, second, third, and fourth pieces of output data transferred during Read operations.
D0, D1, D2, and D3 indicate the first, second, third, and fourth pieces of input data transferred during Write operations.
Qs are tristated for one cycle in response to Deselect and Write commands, one cycle after the command is sampled, except when pre-
ceded by a Read command.
Users should not clock in metastable addresses.
6.
相關PDF資料
PDF描述
GS8662D36GE-167I 72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D36GE-200 72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D36GE-200I 72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D36GE-250 72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D36GE-250I 72Mb SigmaQuad-II Burst of 4 SRAM
相關代理商/技術參數
參數描述
GS8662D36GE-167I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D36GE-200 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D36GE-200I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D36GE-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM
GS8662D36GE-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 4 SRAM
主站蜘蛛池模板: 嘉峪关市| 金阳县| 博兴县| 随州市| 汪清县| 临安市| 鸡西市| 聂拉木县| 沁水县| 辽中县| 耿马| 天峨县| 林州市| 温泉县| 平乐县| 林甸县| 安岳县| 哈尔滨市| 密云县| 钟山县| 乌拉特中旗| 彭州市| 香河县| 五莲县| 喀什市| 富裕县| 宝兴县| 中超| 湖州市| 丽水市| 嵊州市| 青浦区| 连江县| 文安县| 石河子市| 长岭县| 时尚| 嘉祥县| 松滋市| 浮梁县| 天津市|