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參數資料
| 型號： | GS8662Q18E-200 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb SigmaQuad-II Burst of 2 SRAM |
| 中文描述： | 4M X 18 STANDARD SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數： | 17/35頁 |
| 文件大小： | 993K |
| 代理商： | GS8662Q18E-200 |
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Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
Description
Value
Unit
V
DD
Voltage on V
DD
Pins
–0.5 to 2.9
V
V
DDQ
Voltage in V
DDQ
Pins
–0.5 to V
DD
V
V
REF
Voltage in V
REF
Pins
–0.5 to V
DDQ
V
V
I/O
Voltage on I/O Pins
–0.5 to V
DDQ
+0.5 (
≤
2.9 V max.)
–0.5 to V
DDQ
+0.5 (
≤
2.9 V max.)
V
V
IN
Voltage on Other Input Pins
V
I
IN
Input Current on Any Pin
+/–100
mA dc
I
OUT
Output Current on Any I/O Pin
+/–100
mA dc
T
J
Maximum Junction Temperature
125
o
C
T
STG
Storage Temperature
–55 to 125
o
C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Preliminary
GS8662Q08/09/18/36E-300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
17/35
2005, GSI Technology
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
V
DD
1.7
1.8
1.9
V
I/O Supply Voltage
V
DDQ
1.4
1.5
V
DD
V
Reference Voltage
V
REF
0.68
—
0.95
V
Notes:
1.
The power supplies need to be powered up simultaneously or in the following sequence: V
DD
,
V
DDQ
, V
REF
, followed by signal
inputs. The power down sequence must be the reverse. V
DDQ
must not exceed V
DD
.
Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The
part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance
specifications quoted are evaluated for worst case in the temperature range marked on the device.
2.
Operating Temperature
Parameter
Symbol
Min.
Typ.
Max.
Unit
Ambient Temperature
(Commercial Range Versions)
T
A
0
25
70
°
C
Ambient Temperature
(Industrial Range Versions)
T
A
–40
25
85
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| GS8662Q18E-200I | 72Mb SigmaQuad-II Burst of 2 SRAM |
| GS8662Q18E-250 | 72Mb SigmaQuad-II Burst of 2 SRAM |
| GS8662Q18E-250I | 72Mb SigmaQuad-II Burst of 2 SRAM |
| GS8662Q18E-300 | 72Mb SigmaQuad-II Burst of 2 SRAM |
| GS8662Q18E-300I | 72Mb SigmaQuad-II Burst of 2 SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8662Q18E-200I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 0.45NS 165FBGA - Trays |
| GS8662Q18E-250 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 0.45NS 165FBGA - Trays |
| GS8662Q18E-250I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 0.45NS 165FBGA - Trays |
| GS8662Q18E-300 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 2 SRAM |
| GS8662Q18E-300I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaQuad-II Burst of 2 SRAM |
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