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參數(shù)資料
型號(hào)： GS8662R18E-300I
廠商： GSI TECHNOLOGY
元件分類： DRAM
英文描述： 72Mb SigmaCIO DDR-II Burst of 4 SRAM
中文描述： 4M X 18 DDR SRAM, 0.45 ns, PBGA165
封裝： 15 MM X 17 MM, 1MM PITCH, FPBGA-165
文件頁(yè)數(shù)： 16/37頁(yè)
文件大小： 942K
代理商： GS8662R18E-300I
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
Description
Value
Unit
V
DD
Voltage on V
DD
Pins
–0.5 to 2.9
V
V
DDQ
Voltage in V
DDQ
Pins
–0.5 to V
DD
V
V
REF
Voltage in V
REF
Pins
–0.5 to V
DDQ
V
V
I/O
Voltage on I/O Pins
–0.5 to V
DDQ
+0.5 (
≤
2.9 V max.)
–0.5 to V
DDQ
+0.5 (
≤
2.9 V max.)
V
V
IN
Voltage on Other Input Pins
V
I
IN
Input Current on Any Pin
+/–100
mA dc
I
OUT
Output Current on Any I/O Pin
+/–100
mA dc
T
J
Maximum Junction Temperature
125
o
C
T
STG
Storage Temperature
–55 to 125
o
C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
16/37
2005, GSI Technology
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
V
DD
1.7
1.8
1.9
V
I/O Supply Voltage
V
DDQ
1.7
1.8
1.9
V
Reference Voltage
V
REF
0.68
—
0.95
V
Notes:
1.
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 1.4 V
≤
V
DDQ
≤
1.6 V (i.e., 1.5 V I/O)
and 1.7 V
≤
V
DDQ
≤
1.95 V (i.e., 1.8 V I/O) and quoted at whichever condition is worst case.
The power supplies need to be powered up simultaneously or in the following sequence: V
DD
,
V
DDQ
, V
REF
, followed by signal inputs. The
power down sequence must be the reverse. V
DDQ
must not exceed V
DD
..
2.
Operating Temperature
Parameter
Symbol
Min.
Typ.
Max.
Unit
Ambient Temperature
(Commercial Range Versions)
T
A
0
25
70
°
C
Ambient Temperature
(Industrial Range Versions)
T
A
–40
25
85
°
C
相關(guān)PDF資料
PDF描述
GS8662R18E-333 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18E-333I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-167 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-167I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-200 72Mb SigmaCIO DDR-II Burst of 4 SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8662R18E-333 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18E-333I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-167 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-167I 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R18GE-200 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
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