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參數(shù)資料
| 型號(hào)： | GS8662R36E-200I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| 中文描述： | 2M X 36 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 MM X 17 MM, 1MM PITCH, FPBGA-165 |
| 文件頁數(shù)： | 17/37頁 |
| 文件大小： | 942K |
| 代理商： | GS8662R36E-200I |
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Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
17/37
2005, GSI Technology
HSTL I/O DC Input Characteristics
Parameter
Symbol
Min
Max
Units
Notes
DC Input Logic High
V
IH
(dc)
V
REF
+ 0.10
V
DD
+ 0.3 V
V
1
DC Input Logic Low
Notes:
1.
Compatible with both 1.8 V and 1.5 V I/O drivers
2.
These are DC test criteria. DC design criteria is V
REF
± 50 mV. The AC V
IH
/V
IL
levels are defined separately for measuring timing parame-
ters.
3.
V
IL
(Min) DC = –0.3 V, V
IL
(Min) AC = –1.5 V (pulse width
≤
3 ns).
4.
V
IH
(Max) DC = V
DDQ
+ 0.3 V, V
IH
(Max) AC = V
DDQ
+ 0.85 V (pulse width
≤
3 ns).
HSTL I/O AC Input Characteristics
V
IL
(dc)
–0.3 V
V
REF
– 0.10
V
1
Parameter
Symbol
Min
Max
Units
Notes
AC Input Logic High
V
IH
(ac)
V
REF
+ 0.20
—
V
3,4
AC Input Logic Low
V
IL
(ac)
—
V
REF
– 0.20
V
3,4
V
REF
Peak to Peak AC Voltage
Notes:
1.
The peak to peak AC component superimposed on V
REF
may not exceed 5% of the DC component of V
REF
.
2.
To guarantee AC characteristics, V
IH
,V
IL
, Trise, and Tfall of inputs and clocks must be within 10% of each other.
3.
For devices supplied with HSTL I/O input buffers. Compatible with both 1.8 V and 1.5 V I/O drivers.
V
REF
(ac)
—
5% V
REF
(DC)
V
1
20% tKHKH
V
SS
– 1.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKHKH
V
DD
+ 1.0 V
50%
V
DD
V
IL
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| GS8662R36E-250I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-300 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-300I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-333 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8662R36E-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-300 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 72MBIT 2MX36 0.45NS 165FBGA - Trays |
| GS8662R36E-300I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 72MBIT 2MX36 0.45NS 165FBGA - Trays |
| GS8662R36E-333 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
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