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參數資料
| 型號： | GS8662R36E-250 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| 中文描述： | 2M X 36 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 MM X 17 MM, 1MM PITCH, FPBGA-165 |
| 文件頁數： | 19/37頁 |
| 文件大小： | 942K |
| 代理商： | GS8662R36E-250 |
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Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
19/37
2005, GSI Technology
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Max.
Units
Notes
Output High Voltage
V
OH1
V
DDQ
/2
V
DDQ
V
1, 3
Output Low Voltage
V
OL1
Vss
V
DDQ
/2
V
2, 3
Output High Voltage
V
OH2
V
DDQ
– 0.2
V
DDQ
V
4, 5
Output Low Voltage
V
OL2
Vss
0.2
V
4, 6
Notes:
1.
2.
3.
4.
5.
6.
I
OH
= (V
DDQ
/2) / (RQ/5) +/– 15% @ V
OH
= V
DDQ
/2 (for: 175
≤
RQ
≤
350
).
I
OL
= (V
DDQ
/2) / (RQ/5) +/– 15% @ V
OL
= V
DDQ
/2 (for: 175
≤
RQ
≤
350
)
.
Parameter tested with RQ = 250
and V
DDQ
= 1.5 V or 1.8 V
Minimum Impedance mode, ZQ = V
SS
I
OH
= –1.0 mA
I
OL
= 1.0 mA
Operating Currents
Parameter
Symbol
Test Conditions
-333
-300
-250
-200
-167
Notes
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
Operating Current (x36):
DDR
I
DD
V
DD
= Max, I
OUT
= 0 mA
Cycle Time
≥
t
KHKH
Min
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
2, 3
Operating Current (x18):
DDR
I
DD
V
DD
= Max, I
OUT
= 0 mA
Cycle Time
≥
t
KHKH
Min
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
2, 3
Operating Current (x9):
DDR
I
DD
V
DD
= Max, I
OUT
= 0 mA
Cycle Time
≥
t
KHKH
Min
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
2, 3
Operating Current (x8):
DDR
I
DD
V
DD
= Max, I
OUT
= 0 mA
Cycle Time
≥
t
KHKH
Min
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
2, 3
Standby Current (NOP):
DDR
I
SB1
Device deselected,
I
OUT
= 0 mA, f = Max,
All Inputs
≤
0.2 V or
≥
V
DD
– 0.2 V
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
2, 4
Notes:
1.
2.
3.
4.
Power measured with output pins floating.
Minimum cycle, I
OUT
= 0 mA
Operating current is calculated with 50% read cycles and 50% write cycles.
Standby Current is only after all pending read and write burst operations are completed.
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|---|---|
| GS8662R36E-250I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-300 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-300I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-333 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-333I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8662R36E-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-300 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 72MBIT 2MX36 0.45NS 165FBGA - Trays |
| GS8662R36E-300I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 72MBIT 2MX36 0.45NS 165FBGA - Trays |
| GS8662R36E-333 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-333I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
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