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參數資料
| 型號： | GS8662S08GE-250 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| 中文描述： | 8M X 8 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 |
| 文件頁數： | 9/37頁 |
| 文件大小： | 960K |
| 代理商： | GS8662S08GE-250 |
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Preliminary
GS8662S08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
9/37
2005, GSI Technology
Special Functions
Byte Write and Nybble Write Control
Byte Write Enable pins are sampled at the same time that Data In is sampled. A high on the Byte Write Enable pin associated with
a particular byte (e.g., BW0 controls D0–D8 inputs) will inhibit the storage of that particular byte, leaving whatever data may be
stored at the current address at that byte location undisturbed. Any or all of the Byte Write Enable pins may be driven high or low
during the data in sample times in a write sequence.
Each write enable command and write address loaded into the RAM provides the base address for a 2 beat data transfer. The x18
version of the RAM, for example, may write 36 bits in association with each address loaded. Any 9-bit byte may be masked in any
write sequence.
Nybble Write (4-bit) control is implemented on the 8-bit-wide version of the device. For the x8 version of the device, “Nybble
Write Enable” and “NWx” may be substituted in all the discussion above.
Example x18 RAM Write Sequence using Byte Write Enables
Data In Sample
Time
BW0
BW1
D0–D8
D9–D17
Beat 1
0
1
Data In
Don’t Care
Beat 2
1
0
Don’t Care
Data In
Resulting Write Operation
Beat 1
Beat 2
D0–D8
D9–D17
D0–D8
D9–D17
Written
Unchanged
Unchanged
Written
Output Register Control
SigmaSIO-II SRAMs offer two mechanisms for controlling the output data registers. Typically, control is handled by the Output
Register Clock inputs, C and C. The Output Register Clock inputs can be used to make small phase adjustments in the firing of the
output registers by allowing the user to delay driving data out as much as a few nanoseconds beyond the next rising edges of the K
and K clocks. If the C and C clock inputs are tied high, the RAM reverts to K and K control of the outputs.
相關PDF資料 |
PDF描述 |
|---|---|
| GS8662S08GE-250I | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-300 | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-300I | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-333 | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-333I | 72Mb Burst of 2 DDR SigmaSIO-II SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GS8662S08GE-250I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-300 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-300I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-333 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
| GS8662S08GE-333I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM |
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