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參數資料
型號: GS88136BD-200IV
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FPBGA-165
文件頁數: 17/36頁
文件大小: 776K
代理商: GS88136BD-200IV
GS88118/32/36B(T/D)-xxxV
Rev: 1.00 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
17/36
2006, GSI Technology
V
DDQ2
& V
DDQ1
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
0.3
0.3*V
DD
V
1
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
20% tKC
V
SS
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Note:
These parameters are sample tested.
= 2.5 V)
相關PDF資料
PDF描述
GS88136BD-200V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-250IV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-250V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-150IV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-150V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS88136BD-200V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-250I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 9MBIT 256KX36 5.5NS/2.5NS 165FBGA - Trays
GS88136BD-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BD-250V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
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