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參數(shù)資料
型號: GS88136BGD-200IV
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件頁數(shù): 20/36頁
文件大小: 776K
代理商: GS88136BGD-200IV
AC Electrical Characteristics
Parameter
Symbol
-250
-200
-150
Unit
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
4.0
5.0
6.7
ns
Clock to Output Valid
tKQ
3.0
3.0
3.8
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ
1
1.5
1.5
1.5
ns
Setup time
tS
1.2
1.4
1.5
ns
Hold time
tH
0.2
0.4
0.5
ns
Flow Through
Clock Cycle Time
tKC
5.5
6.5
7.5
ns
Clock to Output Valid
tKQ
5.5
6.5
7.5
ns
Clock to Output Invalid
tKQX
2.0
2.0
2.0
ns
Clock to Output in Low-Z
tLZ
1
2.0
2.0
2.0
ns
Setup time
tS
1.5
1.5
1.5
ns
Hold time
tH
0.5
0.5
0.5
ns
Clock HIGH Time
tKH
1.3
1.3
1.5
ns
Clock LOW Time
tKL
1.7
1.7
1.7
ns
Clock to Output in
High-Z
tHZ
1
1.5
2.5
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
2.5
3.0
3.8
ns
G to output in Low-Z
tOLZ
1
0
0
0
ns
G to output in High-Z
tOHZ
1
2.5
3.0
3.8
ns
ZZ setup time
tZZS
2
5
5
5
ns
ZZ hold time
tZZH
2
1
1
1
ns
ZZ recovery
tZZR
20
20
20
ns
GS88118/32/36B(T/D)-xxxV
Rev: 1.00 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
20/36
2006, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested
ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相關(guān)PDF資料
PDF描述
GS88136BGD-200V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-250IV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-250V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGT-150IV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGT-150V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS88136BGD-200V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGD-250V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
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