欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: GS88136BGT-250I
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 5.5 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁數: 17/39頁
文件大小: 791K
代理商: GS88136BGT-250I
GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D)
Rev: 1.05 11/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
17/39
2002, GSI Technology
V
DDQ3
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
2.0
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
0.3
0.8
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
2.0
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
0.3
0.8
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
V
DDQ2
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
0.3
0.3*V
DD
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
0.6*V
DD
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
0.3
0.3*V
DD
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
2.
3.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關PDF資料
PDF描述
GS88136BGT-300 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGT-300I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGT-333 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGT-333I 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-150 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS88136BGT-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGT-250V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGT-300 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGT-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BGT-333 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
主站蜘蛛池模板: 化州市| 安平县| 福建省| 精河县| 伊吾县| 长葛市| 新晃| 池州市| 文登市| 通榆县| 垣曲县| 天津市| 富民县| 阳新县| 青浦区| 尖扎县| 永顺县| 兰溪市| 伊宁县| 阳新县| 江川县| 吉水县| 红原县| 虎林市| 仁寿县| 石柱| 武夷山市| 类乌齐县| 遵化市| 新泰市| 五莲县| 高密市| 平潭县| 大连市| 宁城县| 白银市| 科技| 门源| 唐河县| 大连市| 拜城县|