欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: GS88136BT-200IV
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 6.5 ns, PQFP100
封裝: TQFP-100
文件頁數: 17/36頁
文件大小: 776K
代理商: GS88136BT-200IV
GS88118/32/36B(T/D)-xxxV
Rev: 1.00 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
17/36
2006, GSI Technology
V
DDQ2
& V
DDQ1
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
0.3
0.3*V
DD
V
1
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
40
25
85
°
C
2
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
20% tKC
V
SS
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Note:
These parameters are sample tested.
= 2.5 V)
相關PDF資料
PDF描述
GS88136BT-200V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250IV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E36AD-133I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-166T 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
相關代理商/技術參數
參數描述
GS88136BT-200V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88136BT-250V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
主站蜘蛛池模板: 武定县| 延安市| 壤塘县| 原阳县| 万盛区| 余江县| 莫力| 北京市| 泽州县| 嘉善县| 连州市| 罗田县| 山阳县| 崇明县| 郑州市| 凌源市| 扶绥县| 湟中县| 叙永县| 平远县| 四子王旗| 南汇区| 塔城市| 封开县| 永福县| 桦川县| 光山县| 潞西市| 理塘县| 泾源县| 大同市| 澜沧| 江陵县| 富锦市| 琼结县| 彭水| 阿拉善左旗| 海南省| 潮州市| 轮台县| 长宁区|