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參數(shù)資料
型號(hào): GS881E36AD-166
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 7 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁(yè)數(shù): 24/37頁(yè)
文件大小: 662K
代理商: GS881E36AD-166
GS881E18/36AT-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
16/29
2001, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested
ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
4.0
4.4
5.0
6.0
6.7
7.5
ns
Clock to Output Valid
tKQ
2.5
2.7
3.0
3.4
3.8
4.0
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ
1
1.5
1.5
1.5
1.5
1.5
1.5
ns
Setup time
tS
1.2
1.3
1.4
1.5
1.5
1.5
ns
Hold time
tH
0.2
0.3
0.4
0.5
0.5
0.5
ns
Flow
Through
Clock Cycle Time
tKC
5.5
6.0
6.5
7.0
7.5
8.5
ns
Clock to Output Valid
tKQ
5.5
6.0
6.5
7.0
7.5
8.5
ns
Clock to Output Invalid
tKQX
3.0
3.0
3.0
3.0
3.0
3.0
ns
Clock to Output in Low-Z
tLZ
1
3.0
3.0
3.0
3.0
3.0
3.0
ns
Setup time
tS
1.5
1.5
1.5
1.5
1.5
1.5
ns
Hold time
tH
0.5
0.5
0.5
0.5
0.5
0.5
ns
Clock HIGH Time
tKH
1.3
1.3
1.3
1.3
1.5
1.7
ns
Clock LOW Time
tKL
1.5
1.5
1.5
1.5
1.7
2
ns
Clock to Output in
High-Z
tHZ
1
1.5
2.3
1.5
2.5
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
2.3
2.5
3.2
3.5
3.8
4.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
2.3
2.5
3.0
3.0
3.0
3.0
ns
ZZ setup time
tZZS
2
5
5
5
5
5
5
ns
ZZ hold time
tZZH
2
1
1
1
1
1
1
ns
ZZ recovery
tZZR
20
20
20
20
20
20
ns
相關(guān)PDF資料
PDF描述
GS881E36AD-166I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AD-166IT 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AD-166T 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AD-200 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AD-200I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS881E36AD-166I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AD-166IT 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AD-166T 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AD-200 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AD-200I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
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