欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): GS881E36AT-166
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 7 ns, PQFP100
封裝: TQFP-100
文件頁(yè)數(shù): 19/37頁(yè)
文件大小: 662K
代理商: GS881E36AT-166
GS881E18/36AT-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 11/2004
11/29
2001, GSI Technology
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
0.5 to 4.6
V
0.5 to 4.6
V
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
4.6 V max.)
0.5 to V
DD
+0.5 (
4.6 V max.)
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
20
mA
Output Current on Any I/O Pin
+/
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
55 to 125
o
C
T
BIAS
Temperature Under Bias
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
相關(guān)PDF資料
PDF描述
GS881E36AT-166I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-166IT 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-166T 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-200 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-200I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS881E36AT-166I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-166IT 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-166T 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-200 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-200I 制造商:GSI 制造商全稱(chēng):GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
主站蜘蛛池模板: 瓮安县| 锡林郭勒盟| 蒙山县| 东源县| 贞丰县| 温泉县| 香港 | 景德镇市| 乌恰县| 武功县| 平南县| 固安县| 惠来县| 青浦区| 个旧市| 安庆市| 志丹县| 淮滨县| 两当县| 集贤县| 胶州市| 天全县| 林周县| 临城县| 德惠市| 嘉兴市| 长汀县| 遂川县| 临泉县| 梁山县| 聊城市| 奉化市| 太谷县| 德令哈市| 新源县| 内黄县| 怀来县| 石阡县| 郴州市| 司法| 安泽县|