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參數(shù)資料

型號：	GS881E36AT-225IT
廠商：	GSI TECHNOLOGY
元件分類：	DRAM
英文描述：	512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
中文描述：	256K X 36 CACHE SRAM, 6 ns, PQFP100
封裝：	TQFP-100
文件頁數(shù)：	18/37頁
文件大小：	662K
代理商：	GS881E36AT-225IT

GS881E18/36AT-250/225/200/166/150/133

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.03 11/2004

10/29

2001, GSI Technology

Simplified State Diagram with G

First Write

First Read

Burst Write

Burst Read

Deselect

Notes:

The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.

Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing

through a deselect cycle. Dummy read cycles increment the address counter just like normal read cycles.

Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet

Data Input Set Up Time.

相關(guān)PDF資料	PDF描述
GS881E36AT-225T	512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-250	512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-250I	512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-250IT	512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-250T	512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
GS881E36AT-225T	制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-250	制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-250I	制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-250IT	制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E36AT-250T	制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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