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參數(shù)資料

型號：	GS88236AB-225I
廠商：	GSI TECHNOLOGY
元件分類：	DRAM
英文描述：	512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述：	256K X 36 CACHE SRAM, 6 ns, PBGA119
封裝：	PLASTIC, BGA-119
文件頁數(shù)：	13/38頁
文件大小：	744K
代理商：	GS88236AB-225I

GS88218/36AB/D-250/225/200/166/150/133

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.04 11/2004

13/38

2001, GSI Technology

Simplified State Diagram with G

First Write

First Read

Burst Write

Burst Read

Deselect

Notes:

The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.

Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing

through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.

Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet

Data Input Set Up Time.

相關(guān)PDF資料	PDF描述
GS88236AB-250	512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236AB-250I	512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236AD-133	512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236AD-133I	512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236AD-150	512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
GS88236CB-200	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 6.5NS/3NS 119FPBGA - Trays
GS88236CB-200I	制造商:GSI Technology 功能描述:256K X 36 (9 MEG) SYNCH BURST , SCD, JTAG, FLEXDRIVE - Trays
GS88236CB-200IV	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 6.5NS/3NS 119FPBGA - Trays
GS88236CB-250	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 5.5NS/2.5NS 119FPBGA - Trays
GS88236CD-200	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 6.5NS/3NS 165FPBGA - Trays

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