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參數(shù)資料
型號(hào): GS88236AD-225I
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 6 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FBGA-165
文件頁(yè)數(shù): 19/38頁(yè)
文件大小: 744K
代理商: GS88236AD-225I
GS88218/36AB/D-250/225/200/166/150/133
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 11/2004
19/38
2001, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
4.0
1.5
Max
2.5
Min
4.4
1.5
Max
2.7
Min
5.0
1.5
Max
3.0
Min
6.0
1.5
Max
3.4
Min
6.7
1.5
Max
3.8
Min
7.5
1.5
Max
4.0
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tS
tH
tKC
tKQ
tKQX
1.5
1.5
1.5
1.5
1.5
1.5
ns
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
1.2
0.2
5.5
3.0
5.5
1.3
0.3
6.0
3.0
6.0
1.4
0.4
6.5
3.0
6.5
1.5
0.5
7.0
3.0
7.0
1.5
0.5
7.5
3.0
7.5
1.5
0.5
8.5
3.0
8.5
ns
ns
ns
ns
ns
Flow
Through
Clock to Output in Low-Z
tLZ
1
tS
tH
tKH
tKL
3.0
3.0
3.0
3.0
3.0
3.0
ns
Setup time
Hold time
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z
G to Output Valid
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.5
1.7
1.5
0.5
1.7
2
ns
ns
ns
ns
tHZ
1
1.5
2.3
1.5
2.5
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
tOE
2.3
2.5
3.2
3.5
3.8
4.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
2.3
2.5
3.0
3.0
3.0
3.0
ns
ZZ setup time
tZZS
2
5
5
5
5
5
5
ns
ZZ hold time
tZZH
2
tZZR
1
1
1
1
1
1
ns
ZZ recovery
20
20
20
20
20
20
ns
相關(guān)PDF資料
PDF描述
GS88236AD-250 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236AD-250I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-150IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-150V 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218BB-200IV 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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GS88236CB-200I 制造商:GSI Technology 功能描述:256K X 36 (9 MEG) SYNCH BURST , SCD, JTAG, FLEXDRIVE - Trays
GS88236CB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 6.5NS/3NS 119FPBGA - Trays
GS88236CB-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 5.5NS/2.5NS 119FPBGA - Trays
GS88236CD-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 6.5NS/3NS 165FPBGA - Trays
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