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參數資料
型號: GS88236BD-200
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, FPBGA-165
文件頁數: 19/37頁
文件大小: 751K
代理商: GS88236BD-200
GS88218/36BB/D-333/300/250/200/150
Rev: 1.02 10/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
19/37
2002, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-333
-300
-250
-200
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
3.0
3.3
4.0
5.0
6.7
ns
Clock to Output Valid
tKQ
2.5
2.5
2.5
3.0
3.8
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ
1
1.5
1.5
1.5
1.5
1.5
ns
Setup time
tS
1.0
1.0
1.2
1.4
1.5
ns
Hold time
tH
0.1
0.1
0.2
0.4
0.5
ns
Flow
Through
Clock Cycle Time
tKC
4.5
5.0
5.5
6.5
7.5
ns
Clock to Output Valid
tKQ
4.5
5.0
5.5
6.5
7.5
ns
Clock to Output Invalid
tKQX
2.0
2.0
2.0
2.0
2.0
ns
Clock to Output in Low-Z
tLZ
1
2.0
2.0
2.0
2.0
2.0
ns
Setup time
tS
1.3
1.4
1.5
1.5
1.5
ns
Hold time
tH
0.3
0.4
0.5
0.5
0.5
ns
Clock HIGH Time
tKH
1.0
1.0
1.3
1.3
1.5
ns
Clock LOW Time
tKL
1.2
1.2
1.5
1.5
1.7
ns
Clock to Output in
High-Z
tHZ
1
1.5
2.5
1.5
2.5
1.5
2.5
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
2.5
2.5
2.5
3.0
3.8
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
2.5
2.5
2.5
3.0
3.8
ns
ZZ setup time
tZZS
2
5
5
5
5
5
ns
ZZ hold time
tZZH
2
1
1
1
1
1
ns
ZZ recovery
tZZR
20
20
20
20
20
ns
相關PDF資料
PDF描述
GS88236BD-200I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BD-250 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BD-250I 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BD-300 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88236BD-333 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS88236CB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 6.5NS/3NS 119FPBGA - Trays
GS88236CB-200I 制造商:GSI Technology 功能描述:256K X 36 (9 MEG) SYNCH BURST , SCD, JTAG, FLEXDRIVE - Trays
GS88236CB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 6.5NS/3NS 119FPBGA - Trays
GS88236CB-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 5.5NS/2.5NS 119FPBGA - Trays
GS88236CD-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 6.5NS/3NS 165FPBGA - Trays
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