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參數資料
型號: GS88237BGD-300
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 256K x 36 9Mb SCD/DCD Sync Burst SRAM
中文描述: 256K X 36 CACHE SRAM, 2.2 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, LEAD FREE, FBGA-165
文件頁數: 6/29頁
文件大小: 577K
代理商: GS88237BGD-300
GS88237BB/D-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 3/2005
6/29
2002, GSI Technology
Mode Pin Functions
Note:
There are pull-up devices onthe ZQ, SCD pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip will
operate in the default states as specified in the above tables.
Burst Counter Sequences
BPR 1999.05.18
Mode Name
Pin Name
State
L
H
L or NC
Function
Linear Burst
Interleaved Burst
Active
Standby, I
DD
= I
SB
Dual Cycle Deselect
Single Cycle Deselect
High Drive (Low Impedance)
Low Drive (High Impedance)
Activate DQPx I/Os (x18/x36 mode)
Deactivate DQPx I/Os (x16/x32 mode)
Burst Order Control
LBO
Power Down Control
ZZ
H
Single/Dual Cycle Deselect Control
SCD
L
H or NC
L
H or NC
L
H or NC
FLXDrive Output Impedance Control
ZQ
9th Bit Enable
PE
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
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相關代理商/技術參數
參數描述
GS88237CB-200 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.7NS 119FPBGA - Trays
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GS88237CB-200IV 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays
GS88237CB-200V 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 256KX36 2.5NS 119FPBGA - Trays
GS88237CB-250 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 256KX36 2.3NS 119FPBGA - Trays
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