- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384357 > GS882V18BGB-200 (GSI TECHNOLOGY) 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs PDF資料下載
參數(shù)資料
| 型號： | GS882V18BGB-200 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| 中文描述： | 512K X 18 CACHE SRAM, 6.5 ns, PBGA119 |
| 封裝： | LEAD FREE, FBGA-119 |
| 文件頁數(shù)： | 1/36頁 |
| 文件大小： | 732K |
| 代理商： | GS882V18BGB-200 |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁
GS882V18/36BB/D-333/300/250/200
512K x 18, 256K x 36
9Mb SCD/DCD Sync Burst SRAMs
333 MHz
–
200 MHz
1.8 V V
DD
1.8 V I/O
119- and 165-Bump BGA
Commercial Temp
Industrial Temp
Rev: 1.02 3/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/36
2004, GSI Technology
Features
FT pin for user-configurable flow through or pipeline operation
Single/Dual Cycle Deselect selectable
IEEE 1149.1 JTAG-compatible Boundary Scan
On-chip read parity checking; even or odd selectable
ZQ mode pin for user-selectable high/low output drive
1.8 V +10%/–10% core power supply
1.8 V I/O supply
LBO pin for Linear or Interleaved Burst mode
Internal input resistors on mode pins allow floating mode pins
Default to SCD x18/x36 Interleaved Pipeline mode
Byte Write (BW) and/or Global Write (GW) operation
Internal self-timed write cycle
Automatic power-down for portable applications
JEDEC-standard 119- and 165-bump BGA packages
Pb-Free 119-bump and 165-bump packages available
Functional Description
Applications
The GS882V18/36B is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter. Although
of a type originally developed for Level 2 Cache applications
supporting high performance CPUs, the device now finds
application in synchronous SRAM applications, ranging from
DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no
degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the
user via the FT mode . Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the
Data Output Register. Holding FT high places the RAM in
Pipeline mode, activating the rising-edge-triggered Data Output
Register.
SCD and DCD Pipelined Reads
The GS882V18/36B is a SCD (Single Cycle Deselect) and
DCD (Dual Cycle Deselect) pipelined synchronous SRAM.
DCD SRAMs pipeline disable commands to the same degree
as read commands. SCD SRAMs pipeline deselect commands
one stage less than read commands. SCD RAMs begin turning
off their outputs immediately after the deselect command has
been captured in the input registers. DCD RAMs hold the
deselect command for one full cycle and then begin turning off
their outputs just after the second rising edge of clock. The user
may configure this SRAM for either mode of operation using
the SCD mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
FLXDrive
The ZQ pin allows selection between high drive strength (ZQ
low) for multi-drop bus applications and normal drive strength
(ZQ floating or high) point-to-point applications. See the
Output Driver Characteristics chart for details.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS882V18/36B operates on a 2.5 V or 3.3 V power
supply. All input are 3.3 V and 2.5 V compatible. Separate
output power (V
DDQ
) pins are used to decouple output noise
from the internal circuits and are 3.3 V and 2.5 V compatible.
Paramter Synopsis
-333
2.5
3.0
-300
2.5
3.3
-250
2.5
4.0
-200
3.0
5.0
Unit
ns
ns
Pipeline
3-1-1-1
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
t
KQ
tCycle
Curr (x18)
Curr (x32/x36)
245
275
4.5
4.5
195
220
225
250
5.0
5.0
180
200
195
220
5.5
5.5
155
175
165
185
6.5
6.5
140
155
mA
mA
ns
ns
mA
mA
Flow Through
2-1-1-1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS882V18BGB-250 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS882V18BGB-250I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS882V18BGB-300 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS882V18BGB-3005I | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
| GS882V18BGB-333 | 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS882V18BGB-200I | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 6.5NS/3NS 119FBGA - Trays |
| GS882V18BGB-300 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 5NS/2.5NS 119FBGA - Trays |
| GS882V18BGD-333 | 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V 9MBIT 512KX18 4.5NS/2.5NS 165FBGA - Trays |
| GS882V36BB-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 7.5NS/3.8NS 119FBGA - Trays |
| GS882V36BB-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V 9MBIT 256KX36 7.5NS/3.8NS 119FBGA - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。