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參數(shù)資料
| 型號(hào)： | GSIB2580/72 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | PLASTIC, CASE GSIB-5S, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 221K |
| 代理商： | GSIB2580/72 |
GSIB2520 thru GSIB2580
Vishay General Semiconductor
Document Number 88646
21-Jul-05
www.vishay.com
1
Case Style GSIB-5S
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~
~
~
Single-Phase Single In-Line Bridge Rectifiers
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
j
max.
25 A
200 V to 800 V
350 A
10 μA
1.0 V
150 °C
Features
UL Recognition file number E54214
Thin Single In-Line package
Glass passivated chip junction
High surge current capability
High case dielectric strength of 2500 V
RMS
Solder Dip 260 °C, 40 seconds
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for Switching Power Supply, Home Appli-
ances, Office Equipment, Industrial Automation
applications
Mechanical Data
Case:
GSIB-5S
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7cm-kg (5 inches-lbs)
Maximum Ratings
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Maximum repetitive peak reverse voltage
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Maximum instantaneous forward
voltage drop per leg
Maximum DC reverse current at
rated DC blocking voltage per leg
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
GSIB2520
200
GSIB2540
400
GSIB2560
600
GSIB2580
800
Unit
V
Maximum RMS voltage
140
280
420
560
V
Maximum DC blocking voltage
200
400
600
800
V
Maximum average forward rectified T
C
= 98 °C
output current at T
A
= 25 °C
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
25
(1)
3.5
(2)
350
A
I
FSM
A
I
2
t
500
A
2
sec
°C
Operating junction and storage temperature range
T
J
, T
STG
- 55 to + 150
Test condition
at 12.5 A
Symbol
V
F
GSIB2520
GSIB2540
GSIB2560
1.00
GSIB2580
Unit
V
T
A
= 25 °C
T
A
= 125 °C
I
R
10
350
μA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GSIB2580-E | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 600V to 1000V Current: 25.0A |
| GSIB2580-E3 | 制造商:Vishay Semiconductors 功能描述:DIODE BRIDGE RECTIFIER 制造商:Vishay Semiconductors 功能描述:DIODE, BRIDGE RECTIFIER |
| GSIB2580-E3 | 制造商:Vishay Semiconductors 功能描述:Bridge Rectifier |
| GSIB2580-E3/45 | 功能描述:橋式整流器 800 Volt 25 Amp 350 Amp IFSM RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube |
| GSIB2580N | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Single-Phase Single In-Line Bridge Rectifiers |
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