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參數(shù)資料
| 型號： | GTT8205S |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 338K |
| 代理商： | GTT8205S |
Electrical Characteristics (Tj = 25
к
unless otherwise specified)
Parameter
Symbol
GTT8205S
Page: 2/4
ISSUED DATE :2006/07/19
REVISED DATE :2006/11/09B
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BV
DSS
20
-
-
V V
GS
=0, I
D
=250uA
Breakdown Voltage Temperature Coefficient
BV
DSS
/
Tj
-
0.03
-
V/
к
Reference to 25
, I
к
D
=1mA
Gate Threshold Voltage
V
GS(th)
0.5
-
1.5
V V
DS
=V
GS
, I
D
=250uA
Forward Transconductance
g
fs
-
20
-
S V
DS
=10V, I
D
=6A
Gate-Source Leakage Current
I
GSS
-
-
±100
nA V
GS
= ±8V
Drain-Source Leakage Current(Tj=25
)
к
-
-
1
uA V
DS
=20V, V
GS
=0
Drain-Source Leakage Current(Tj=70
)
к
I
DSS
-
-
25
uA V
DS
=16V, V
GS
=0
-
-
28
V
GS
=4.5V, I
D
=6.0A
Static Drain-Source On-Resistance
2
R
DS(ON)
-
-
38
m
V
GS
=2.5V, I
D
=5.2A
Total Gate Charge
2
Q
g
-
23
-
Gate-Source Charge
Q
gs
-
4.5
-
Gate-Drain (“Miller”) Change
Q
gd
-
7
-
nC
I
D
=6A
V
DS
=20V
V
GS
=5V
Turn-on Delay Time
2
T
d(on)
-
30
-
Rise Time
T
r
-
70
-
Turn-off Delay Time
T
d(off)
-
40
-
Fall Time
T
f
-
65
-
ns
V
DS
=10V
I
D
=1A
V
GS
=5V
R
G
=6
R
D
=10
Input Capacitance
C
iss
-
1035
-
Output Capacitance
C
oss
-
320
-
Reverse Transfer Capacitance
Source-Drain Diode
Parameter
C
rss
-
150
-
pF
V
GS
=0V
V
DS
=20V
f=1.0MHz
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage
2
Notes: 1. Pulse width limited by Max. junction temperature.
V
SD
-
-
1.2
V
I
S
=1.7A, V
GS
=0V
2. Pulse width
300us, duty cycle
2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board, t
5sec; 180
/W when mounted on Min. copper pad.
к
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