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參數(shù)資料
| 型號(hào)： | GVT73256A16TS-15L |
| 英文描述： | x16 SRAM |
| 中文描述： | x16的SRAM |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 87K |
| 代理商： | GVT73256A16TS-15L |
ASYNCHRONOUS
SRAM
128K x 16 SRAM
+3.3V SUPPLY, SINGLE CHIP ENABLE
REVOLUTIONARY PINOUT
GVT73128A16
REVOLUTIONARY PINOUT 128K X 16
GALVANTECH
, INC.
Galvantech, Inc. reserves the right to chang
products or specifications without notice
Rev. 1/99
Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688
Fax (408) 566-0699
Web Site: http://www.galvantech.com
FEATURES
Fast access times: 10, 12, and 15ns
Fast OE# access times: 5, 6, and 7ns
Single +3.3V +0.3V power supply
Fully static -- no clock or timing strobes necessary
All inputs and outputs are TTL-compatible
Three state outputs
Center power and ground pins for greater noise immunity
Easy memory expansion with CE# and OE# options
Automatic CE# power down
High-performance, low-power consumption, CMOS
triple-poly, double-metal process
Packaged in 44-pin, 400-mil SOJ; 44-pin TQFP and 44-
pin, 400-mil TSOP
OPTIONS
Timing
10ns access
12ns access
15ns access
MARKING
-10
-12
-15
Packages
44-pin SOJ (400 mil)
44-pin TQFP
44-pin TSOP (400 mil)
J
T
TS
Power consumption
Standard
Low
None
L
Temperature
Commercial
Industrial
None
I
(
0°C
to
70°C)
(
-40°C
to
85°C)
GENERAL DESCRIPTION
The GVT73128A16 is organized as a 131,072 x 16
SRAM using a four-transistor memory cell with a high
performance, silicon gate, low-power CMOS process.
Galvantech SRAMs are fabricated using triple-layer
polysilicon, double-layer metal technology.
This device offers center power and ground pins for
improved performance and noise immunity. Static design
eliminates the need for external clocks or timing strobes. For
increased system flexibility and eliminating bus contention
problems, this device offers chip enable (CE#), separate byte
enable controls (BLE# and BHE#) and output enable (OE#)
with this organization.
The device offers a low power standby mode when chip
is not selected. This allows system designers to meet low
standby power requirements.
1
2
3
4
5
6
7
8
9
10
32
31
30
29
28
27
26
25
24
23
19
20
21
11
12
13
14
15
16
22
18
17
A6
A7
OE#
BHE#
BLE#
DQ12
DQ11
DQ10
DQ9
NC
A8
A9
A10
A11
NC
DQ16
DQ15
DQ14
DQ13
VSS
VCC
A2
A1
A0
DQ3
DQ4
VCC
VSS
DQ5
DQ6
WE#
A16
A15
A14
A13
A12
CE#
DQ1
DQ2
A5
A3
PIN ASSIGNMENT
44-Pin SOJ
44-Pin TSOP
33
34
35
36
A4
41
42
43
44
37
38
39
40
DQ7
DQ8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GVT73256A16TS-15LI | x16 SRAM |
| GVT73512A8J-10 | x8 SRAM |
| GVT73512A8J-10I | x8 SRAM |
| GVT73512A8J-10L | x8 SRAM |
| GVT73512A8J-10LI | x8 SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GVT73256A16TS-15LI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| GVT73512A8-10 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:256K x 16 Static RAM |
| GVT73512A8-12 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:256K x 16 Static RAM |
| GVT73512A8J-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| GVT73512A8J-10I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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