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參數資料
| 型號： | GW30N90D |
| 廠商： | 意法半導體 |
| 英文描述： | N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT |
| 中文描述： | N溝道900V - 30A條-對247 IGBT的非常快速PowerMESH |
| 文件頁數： | 1/10頁 |
| 文件大小： | 146K |
| 代理商： | GW30N90D |
Preliminary Data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
July 2007
Rev 1
1/10
10
STGW30N90D
N-channel 900V - 30A - TO-247
Very fast PowerMESH IGBT
Features
■
Low on-losses
■
Low on-voltage drop (V
cesat
)
■
High current capability
■
High input impedance (voltage driven)
■
Low gate charge
■
Ideal for soft switching application
Description
Using the latest high voltage technology based on
its patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, with
outstanding performances.
Application
■
Induction heating
Figure 1.
Internal schematic diagram
Type
V
CES
V
CE(sat)
@25°C
I
C
@100°C
STGW30N90D
900V
< 2.75V
30A
TO-247
Table 1.
Device summary
Order code
Marking
Package
Packaging
STGW30N90D
GW30N90D
TO-247
Tube
www.st.com
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