- 您現在的位置：買賣IC網 > PDF目錄384361 > GWM160-0055P3 (IXYS CORP) Three phase full bridge with Trench MOSFETs in DCB isolated high current package PDF資料下載
參數資料
| 型號： | GWM160-0055P3 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Three phase full bridge with Trench MOSFETs in DCB isolated high current package |
| 中文描述： | 160 A, 55 V, 0.0029 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/3頁 |
| 文件大小： | 79K |
| 代理商： | GWM160-0055P3 |
2004 IXYS All rights reserved
4
1 - 3
GWM 160-0055P3
IXYS reserves the right to change limits, test conditions and dimensions.
Three phase full bridge
with Trench MOSFETs
in DCB isolated high current package
Applications
AC drives
in automobiles
-electric power steering
-starter generator
in industrial vehicles
-propulsion drives
-fork lift drives
in battery supplied equipment
Features
MOSFETs in trench technology:
-low R
-optimized intrinsic reverse diode
package:
-high level of integration
-high current capability
-auxiliary terminals for MOSFET control
-terminals for soldering or welding
connections
-isolated DCB ceramic base plate
with optimized heat transfer
V
DSS
I
D25
R
DSon typ.
= 2.3 m
= 55 V
= 160 A
Preliminary data
MOSFETs
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C
55
V
V
GS
±20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
160
120
A
A
I
F25
I
F90
T
C
= 25°C (diode)
T
C
= 90°C (diode)
135
90
A
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DSon
on chip level at
V
GS
= 10 V
T
VJ
= 25°C
T
VJ
= 125°C
2.3
3.8
2.9 m
m
V
GSth
V
DS
= 20 V;
I
D
= 1 mA
2
4
V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
1
μA
mA
0.1
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
0.2
μA
Q
g
Q
gs
Q
gd
86
18
25
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
25
50
70
40
ns
ns
ns
ns
V
F
(diode) I
F
= 80 A; V
GS
= 0 V
0.9
1.4
V
t
rr
(diode) I
F
= 20
A; -di/dt
=
100
A/μs; V
DS
=
30
V
100
ns
R
thJC
R
thJH
0.85 K/W
with heat transfer paste
1.7
K/W
V
GS
= 10 V; V
DS
= 44 V; I
D
= 25 A
V
GS
= 10 V; V
= 30 V;
I
D
G
= 10
L +
G1
S1
G2
S2
L -
G3
S3
G4
S4
G5
S5
G6
S6
L
1
L2
L
3
相關PDF資料 |
PDF描述 |
|---|---|
| GXB1000 | 16-Channel GPS Receiver Module(16通道全球數字定位系統（GPS）接收器模塊) |
| GXB5005 | SMD Type GPS Receiver Module |
| GZB8.2 | surface mount silicon Zener diodes |
| GZB9.1 | surface mount silicon Zener diodes |
| GZB7.5 | surface mount silicon Zener diodes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| GWM160-0055P3-SMD | 制造商:IXYS Corporation 功能描述:GWM160 Series 55 Vds 2 Mohm 1.2 kW 160 A 3 Phase Full Bridge w/ Trench MOSFET |
| GWM160-0055X1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Three phase full Bridge with Trench MOSFETs in DCB isolated high current package |
| GWM160-0055X1-SL | 功能描述:MOSFET 160 Amps 55V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| GWM160-0055X1-SL SAM | 功能描述:分立半導體模塊 160 Amps 55V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| GWM160-0055X1-SLSAM | 功能描述:MOSFET 3 Phase Full Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。